26.03.2014 Selection of optimal parameters of laser radiation for simulating ionization effects in silicon bulk-technology microcircuits
A method for increasing the efficiency of using laser radiation (LR) energy for the formation of high levels of the equivalent dose rate, which is based on reducing the radiation wavelength, is substantiated. It is shown that the optimal range of LR energies for simulation of bulk ionization effects in CMOS microcircuits fabricated by bulk technology lies in ranges from 1.08 to 0.97 μm.
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